Samsung Electronics unveiled the industry’s highest capacity 12 NM Class 32GB DDR5 DRAM, ideal for the era of artificial intelligence
- Provides double the capacity of 16 GB modules within a single package size, enables the production of 128 GB DRAM module without TSV process and reduces power consumption by 10%.
- The new product also paves the way for DRAM modules of capacity up to 1TB.
- With an expanded lineup of 12 nm class DRAM, Samsung will continue its collaboration with diverse industries and support a variety of applications.
Samsung Electronics, the world leader in modern memory technology, today announced that it has developed the industry’s first and highest capacity 32 gigabyte (GB) DDR5 DRAM.1 Using 12 nanometer (nm) class process technology. This success comes after Samsung started mass production of its 12 nm Class 16 GB DDR 5 DRAM in May 2023. This strengthens Samsung’s leadership in next-generation DRAM technology and signals the next chapter on high-capacity memory.
“With our 12nm class 32 GB DRAM, we have achieved a solution that will enable DRAM modules of up to 1 terabyte (TB), enabling us to be superior in the era of artificial intelligence (artificial intelligence) and big data,” said Sung Jun Huang, Executive Vice President of DRAM Products and Technology at Samsung Electronics. Those with capacity will be in an ideal position to meet the growing need for DRAM. “We will continue to develop DRAM solutions through various process and design technologies to break the boundaries of memory technology.
DRAM capacity increased 500,000 times since 1983
Having developed its first 64 kilobit (kb) DRAM in 1983, Samsung has now been able to increase its DRAM capacity by a factor of 500,000 over the past 40 years.
Samsung’s latest memory product, developed using innovative processes and technologies to increase integration density and design optimization, boasts the industry’s highest potential for a single DRAM chip and doubles the capacity of 16 GB DDR5 DRAM in the same package size.
Previously, DDR5 128GB DRAM modules produced using 16GB DRAM required processing via silicon via a silicon via (TSV). However, using Samsung’s 32 GB DRAM, the 128 GB module can now be produced without using the TSV process, while reducing power consumption by about 10% compared to 128 GB modules with 16 GB DRAM. These technological advances make the product the best solution for organizations that emphasize power efficiency, such as data centers.
With its 12nm Class 32GB DDR5 DRAM, Samsung plans to expand its lineup of high-capacity DRAM to meet the current and future needs of the computing and IT industry. Samsung will reiterate its leadership in the next-generation DRAM market by providing data centers as well as consumers with 12nM class 32 GB DRAM that require applications such as artificial intelligence and next-generation computing. This product will also play an important role in Samsung’s continued cooperation with other key industry players.
Mass production of the new 12 nm class 32GB DDR5 DRAM is scheduled to begin by the end of this year.
To learn more about Samsung’s DRAM products, visit the Samsung Semiconductor website.